Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5821311
Kind Code:
B2
Abstract:
A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
Inventors:
Yanai Yumi
Yuka Kase
Hiroyuki Ogawa
Yuka Kase
Hiroyuki Ogawa
Application Number:
JP2011135617A
Publication Date:
November 24, 2015
Filing Date:
June 17, 2011
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/304; H01L21/306; H01L21/76
Domestic Patent References:
| JP2000124179A | ||||
| JP11026417A | ||||
| JP2009158531A | ||||
| JP2003151965A |
Attorney, Agent or Firm:
Keishiro Takahashi
Mikio Kuruyama
Mikio Kuruyama