Title:
Ｎｉ膜の形成方法
Document Type and Number:
Japanese Patent JP5826698
Kind Code:
B2
Abstract:
A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
Inventors:
Toshimitsu Uedo
Yasushi Higuchi
Michio Ishikawa
Uesugi Harunori
Naoki Hanada
Yasushi Higuchi
Michio Ishikawa
Uesugi Harunori
Naoki Hanada
Application Number:
JP2012088167A
Publication Date:
December 02, 2015
Filing Date:
April 09, 2012
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C23C16/18; H01L21/28; H01L21/285
Domestic Patent References:
| JP2011066060A | ||||
| JP2006511716A | ||||
| JP2001203211A |
Foreign References:
| WO2010010538A2 | ||||
| WO2010066764A1 | ||||
| WO2011040385A1 | ||||
| WO2006012052A2 | ||||
| US8669191 |
Attorney, Agent or Firm:
Hiroyuki Kurihara