To provide a semiconductor device and a method of manufacturing the same, wherein a capacitor having a ferroelectric film is prevented from deteriorating.

The method of manufacturing the semiconductor device includes the stages of: forming the capacitor Q having a lower electrode 61, a capacitor dielectric film 62 formed of a ferroelectric film, and an upper electrode 63 above a silicon substrate 30; forming an interlayer insulating film 71 on the capacitor Q; forming a hole 59a reaching the upper electrode 63 in the interlayer insulating film 71; forming a first barrier film 67 on an internal surface of the hole 59a and a surface of the upper electrode 63 exposed from the hole 59a; forming a second barrier film 68 having higher oxygen concentration than the first barrier film 67 on the first barrier film 67; and forming a conductive film 74 above the second barrier film 68 to fill the hole 59a.

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