半導体装置の製造方法 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置の製造方法

Document Type and Number:

Japanese Patent JP5832780

Kind Code:

B2

More Like This:

JP4530098	Semiconductor device
JPH04279025	MANUFACTURE OF SEMICONDUCTOR ELEMENT
JP2002333617	FLAT PANEL DISPLAY, SUBSTRATE USED FOR THE SAME, AND MANUFACTURING METHOD FOR THE SAME

Inventors:

Hidekazu Miyairi
Koji Dairiki
Jimbo Yasuhiro
Tomohiro Kimura
Yoshitaka Yamamoto

Application Number:

JP2011116172A

Publication Date:

December 16, 2015

Filing Date:

May 24, 2011

Export Citation:

Assignee:

Semiconductor Energy Laboratory Co., Ltd.
Sharp Corporation

International Classes:

H01L29/786; H01L21/336

Domestic Patent References:

Foreign References:

WO2010138811A2

Attorney, Agent or Firm:

Mutsumi Yanase
Atsushi Watanabe

Previous Patent: 液滴塗布装置及び液滴塗布方法

Next Patent: JPS5832781