Title:
半導体磁器組成物の製造方法及び半導体磁器組成物を用いたヒータ
Document Type and Number:
Japanese Patent JP5844507
Kind Code:
B2
Abstract:
To improve jump characteristic of BaTiO 3 -(Bi 1/2 Na 1/2 )TiO 3 material. There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi-Na, the process including a step of preparing a (BaQ)TiO 3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO 3 calcined powder, a step of mixing the (BaQ)TiO 3 calcined powder and the (BiNa)TiO 3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600°C or lower; and a PCT heater employing the element prepared by the above steps.
Inventors:
Takeshi Shimada
Kentaro Ino
Yuki Kida
Kentaro Ino
Yuki Kida
Application Number:
JP2008071353A
Publication Date:
January 20, 2016
Filing Date:
March 19, 2008
Export Citation:
Assignee:
Hitachi Metals Co., Ltd.
International Classes:
C04B35/468; H01C7/02
Domestic Patent References:
| JP6186467A | ||||
| JP8153604A | ||||
| JP2001130957A | ||||
| JP2007246328A |
Foreign References:
| WO2006118274A1 |
Attorney, Agent or Firm:
Shinei Patent Office