Title:
プラズマエッチング処理方法
Document Type and Number:
Japanese Patent JP5845754
Kind Code:
B2
Abstract:
There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
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Inventors:
Toshihisa Nozawa
Masaru Sasaki
Jun Hashimoto
Shota Yoshimura
Toshihisa Ozu
Tetsuya Nishitsuka
Masaru Sasaki
Jun Hashimoto
Shota Yoshimura
Toshihisa Ozu
Tetsuya Nishitsuka
Application Number:
JP2011200993A
Publication Date:
January 20, 2016
Filing Date:
September 14, 2011
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2010118549A | ||||
| JP2000091321A | ||||
| JP11233488A | ||||
| JP6061190A | ||||
| JP2007059696A | ||||
| JP2010519758A | ||||
| JP2010519767A | ||||
| JP2000323454A |
Foreign References:
| WO2010029681A1 |
Attorney, Agent or Firm:
Patent Business Corporation Imy International Patent Office
Hidehiko Ito
Morishita Hachiro
Hiroyuki Yoshida
Hidehiko Ito
Morishita Hachiro
Hiroyuki Yoshida