Title:
自己整合ＣＮＴＦＥＴデバイスおよびその形成方法
Document Type and Number:
Japanese Patent JP5852643
Kind Code:
B2
Abstract:
A method of forming a self-aligned device is provided and includes depositing carbon nanotubes (CNTs) onto a crystalline dielectric substrate, isolating a portion of the crystalline dielectric substrate encompassing a location of the CNTs, forming gate dielectric and gate electrode gate stacks on the CNTs while maintaining a structural integrity thereof and forming epitaxial source and drain regions in contact with portions of the CNTs on the crystalline dielectric substrate that are exposed from the gate dielectric and gate electrode gate stacks.
Inventors:
Chan, Josephine
Chan, Paul
Narayanan, Vijay
Slate, Jeffrey
Chan, Paul
Narayanan, Vijay
Slate, Jeffrey
Application Number:
JP2013514611A
Publication Date:
February 03, 2016
Filing Date:
May 10, 2011
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30; H01L51/40
Domestic Patent References:
| JP2008235752A | ||||
| JP2005126323A | ||||
| JP2001020072A | ||||
| JP2009010140A | ||||
| JP2006524172A | ||||
| JP3057228A | ||||
| JP63060153A |
Foreign References:
| WO2010020579A1 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City