Title:
化合物半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5857573
Kind Code:
B2
Abstract:
An embodiment of a compound semiconductor device includes: a Si substrate; a Si oxide layer formed over a surface of the Si substrate; a nucleation layer formed over the Si oxide layer, the nucleation layer exposing a part of the Si oxide layer; and a compound semiconductor stacked structure formed over the Si oxide layer and the nucleation layer.
Inventors:
Atsushi Yamada
Application Number:
JP2011203582A
Publication Date:
February 10, 2016
Filing Date:
September 16, 2011
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/205; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| JP1149488A | ||||
| JP2001284266A | ||||
| JP2007096331A | ||||
| JP2010123725A | ||||
| JP2011044743A | ||||
| JP3132017A | ||||
| JP2005019872A | ||||
| JP2008227338A | ||||
| JP2000286449A |
Foreign References:
| US20070298592 | ||||
| US20050199886 |
Attorney, Agent or Firm:
Takayoshi Kokubun