Title:
ＳｉＣ単結晶の製造装置及び製造方法
Document Type and Number:
Japanese Patent JP5863977
Kind Code:
B2
Abstract:
A SiC single crystal production apparatus is used in production of SiC single crystals by solution growth techniques. The apparatus includes: a seed shaft having a lower end surface to which a SiC seed crystal is to be attached; a crucible that contains a Si—C solution; a stirring member that is immersed in the Si—C solution; and drive sources that cause relative rotation between the crucible and the stirring member. The lower end of the stirring member is located lower than the lower end of the SiC seed crystal attached to the lower end surface of the seed shaft.
Inventors:
Kazuhiko Kusunoki
Kamei alone
Masahiro Yashiro
Nobuhiro Okada
Koji Moriguchi
Miki Hisashi
Hironori Oguro
Hidemitsu Sakamoto
Kamei alone
Masahiro Yashiro
Nobuhiro Okada
Koji Moriguchi
Miki Hisashi
Hironori Oguro
Hidemitsu Sakamoto
Application Number:
JP2014534181A
Publication Date:
February 17, 2016
Filing Date:
September 02, 2013
Export Citation:
Assignee:
Nippon Steel & Sumitomo Metal Corporation
TOYOTA JIDOSHA KABUSHIKI KAISHA
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
C30B29/36; C30B19/04
Domestic Patent References:
| JP2006117441A | 2006-05-11 | |||
| JPH04164891A | 1992-06-10 | |||
| JP2012091957A | 2012-05-17 | |||
| JP2012136388A | 2012-07-19 | |||
| JP2012136386A | 2012-07-19 |
Attorney, Agent or Firm:
Ascend Patent Business Corporation