Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5875752
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device includes: forming a lower electrode layer in contact with a surface of a nitride semiconductor layer; forming an Al layer on the lower electrode layer; performing a heat treatment after the formation of the Al layer; removing the Al layer after the heat treatment is performed; and forming an upper electrode layer on the lower electrode layer after the removal of the Al layer.
Inventors:
Masahiro Nishi
Application Number:
JP2010167386A
Publication Date:
March 02, 2016
Filing Date:
July 26, 2010
Export Citation:
Assignee:
Sumitomo Electric Device Innovation Co., Ltd.
International Classes:
H01L21/28; H01L21/338; H01L29/417; H01L29/778; H01L29/812
Domestic Patent References:
| JP7045867A | ||||
| JP10303407A | ||||
| JP2010171133A | ||||
| JP2006165207A | ||||
| JP2006196764A | ||||
| JP2008306027A | ||||
| JP2010157617A | ||||
| JP4225233A |
Foreign References:
| US20060157735 | ||||
| US20100163929 |
Attorney, Agent or Firm:
Shuhei Katayama