Title:
炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5880429
Kind Code:
B2
Abstract:
A method for manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a semiconductor film made of silicon carbide; forming an insulating film on a surface of said semiconductor film by a deposition method; and performing post heat treatment on said semiconductor film on which said insulating film is formed, a heat treatment temperature in said step of performing post heat treatment being higher than a process temperature in said step of forming an insulating film and lower than a melting point of said insulating film, and not lower than 1200°C and not higher than 1400°C.
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Inventors:
Toru Hiyoshi
Takeyoshi Masuda
Keiji Wada
Takeyoshi Masuda
Keiji Wada
Application Number:
JP2012504431A
Publication Date:
March 09, 2016
Filing Date:
March 04, 2011
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/316; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2008244455A | 2008-10-09 | |||
| JP2008147365A | 2008-06-26 | |||
| JP2003086792A | 2003-03-20 | |||
| JP2008147365A | 2008-06-26 | |||
| JP2003086792A | 2003-03-20 | |||
| JP2008244455A | 2008-10-09 |
Attorney, Agent or Firm:
Fukami patent office