Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
パワー半導体モジュール
Document Type and Number:
Japanese Patent JP5925328
Kind Code:
B2
Abstract:
To provide a power semiconductor module which is capable of suppressing the transfer of the heat generated in a semiconductor element to the outside. This power semiconductor module is characterized by comprising a ceramic substrate (11), semiconductor elements (13a, 13b, 14a, 14b) arranged on one main surface (11a) of the ceramic substrate, terminals (22a-22g) connected to the semiconductor elements, a first heat dissipation member (41) that is arranged on the other main surface (11b) of the ceramic substrate, and a second heat dissipation member (61) that is arranged on the one main surface side of the ceramic substrate at a distance from the semiconductor elements. This power semiconductor module is also characterized in that the terminals are connected to the second heat dissipation member.

Inventors:
Kohei Matsui
Satoshi Tanimoto
Yoshinori Murakami
Yuko Zuko
Shinji Sato
Hidekazu Tanizawa
Application Number:
JP2014538290A
Publication Date:
May 25, 2016
Filing Date:
August 23, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Fuji Electric Co., Ltd.
Nissan Motor Co., Ltd
Sanken Electric Co., Ltd.
International Classes:
H01L25/07; H01L23/36; H01L25/18
Domestic Patent References:
JP2008103552A2008-05-01
JP2000323630A2000-11-24
JP2006074853A2006-03-16
JP2010219419A2010-09-30
JP2007189133A2007-07-26
JP4954356B12012-06-13
JP2009105389A2009-05-14
JP2009231685A2009-10-08
JPH0951060A1997-02-18
JPH08236664A1996-09-13
Foreign References:
WO2013172183A12013-11-21
WO2013084417A12013-06-13
Attorney, Agent or Firm:
Hiroyoshi Aoki
Amada Masayuki
Yoshimasa Okada