深紫外発光ダイオード - Sensor Electronic Technology Incorporated

Title:

深紫外発光ダイオード

Document Type and Number:

Japanese Patent JP5931058

Kind Code:

B2

Abstract:

A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.

Inventors:

Gasca, Remijus
Shatarov, Maxim, S.
Surreal, michael

Application Number:

JP2013515541A

Publication Date:

June 08, 2016

Filing Date:

June 17, 2011

Export Citation:

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