Title:
Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材
Document Type and Number:
Japanese Patent JP5958822
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a production method capable of stably and inexpensively providing a high density, high purity and nonmagnetic Mo alloy sputtering target material having low resistance, further having excellent heat resistance, moisture resistance and adhesion with a substrate and suitable as an electrode and a wiring film, and to provide a new Mo alloy sputtering target material.SOLUTION: Mo powders and one or more of Ni alloy powders are mixed so as to satisfy a composition which includes 10 to 49 atomic% Ni and 1 to 20 atomic% Nb, and in which the total content of Ni and Nb is ≤50 atomic%, and which has the balance Mo with inevitable impurities, and the mixture thereof is then subjected to press sintering.
Inventors:
Hideo Murata
Kaminada Masashi
Keisuke Inoue
Kaminada Masashi
Keisuke Inoue
Application Number:
JP2012247430A
Publication Date:
August 02, 2016
Filing Date:
November 09, 2012
Export Citation:
Assignee:
Hitachi Metals Co., Ltd.
International Classes:
C23C14/34
Domestic Patent References:
| JP2010132974A | ||||
| JP2000214307A | ||||
| JP2004140319A | ||||
| JP10301499A | ||||
| JP7292463A | ||||
| JP2013511621A |
Foreign References:
| US20120247948 |