多層酸窒化物層を有する酸化物−窒化物−酸化物積層体

Title:

多層酸窒化物層を有する酸化物−窒化物−酸化物積層体

Document Type and Number:

Japanese Patent JP5960724

Kind Code:

B2

Abstract:

A semiconductor device including a silicon-oxide-oxynitride-oxide-silicon structure and methods of forming the same are provided. Generally, the structure comprises: a tunnel oxide layer on a surface of a substrate including silicon; a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which the stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which the stoichiometric composition of the second oxynitride layer results in it being trap dense; a blocking oxide layer on the second oxynitride layer; and a silicon containing gate layer on the blocking oxide layer. Other embodiments are also disclosed.

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Inventors:

Sazzy Levy
RAMKUMAR, Krishnaswamy
JENNE, Fredrick
Sam Geha

Application Number:

JP2013549612A

Publication Date:

August 02, 2016

Filing Date:

January 17, 2012

Export Citation:

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Assignee:

CYPRESS SEMICONDUCTOR CORPORATION

International Classes:

H01L21/336; H01L21/316; H01L21/318; H01L21/8247; H01L27/115; H01L29/788; H01L29/792

Domestic Patent References:

JP2009260070A
JP2005347679A
JP2007318112A
JP2007515060A

Foreign References:

US20080290400
WO2007064048A1
WO2008147386A1
US20070064048
US20090261400
US20050272198
US20070252179
US20050109276
WO2005059200A1
US20090316484
US20090179253

Attorney, Agent or Firm:

Kenji Sugimura
Yamaguchi Yusuke
Keisuke Kawahara

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