Title:
半導体装置
Document Type and Number:
Japanese Patent JP6268254
Kind Code:
B2
Abstract:
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.
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Inventors:
Tatsuya Honda
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Application Number:
JP2016199607A
Publication Date:
January 24, 2018
Filing Date:
October 10, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108
Domestic Patent References:
| JP2013102152A | ||||
| JP2011188477A | ||||
| JP2011091375A | ||||
| JP2010212436A | ||||
| JP2010027194A | ||||
| JP2007012040A | ||||
| JP2011086923A |
Foreign References:
| WO2008117739A1 | ||||
| US20100140609 | ||||
| US20090310734 | ||||
| US20090100265 | ||||
| US20110062436 | ||||
| US20110068335 |