Title:
半導体装置
Document Type and Number:
Japanese Patent JP6378721
Kind Code:
B2
Abstract:
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
Inventors:
Junichi Koizuka
Yuichi Sato
Koji Ohno
Yuichi Sato
Koji Ohno
Application Number:
JP2016150971A
Publication Date:
August 22, 2018
Filing Date:
August 01, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2007250983A | ||||
| JP2010093070A | ||||
| JP2009141249A |