Title:
タングステン膜の成膜方法
Document Type and Number:
Japanese Patent JP6391355
Kind Code:
B2
Abstract:
A tungsten film forming method includes forming a tungsten film on a surface of a substrate to be processed by sequentially supplying a WCl6 gas as a tungsten source gas, a reducing gas composed of a reducible gas including hydrogen and a purge gas into a chamber which accommodates the substrate and which remains in a depressurized atmosphere. A Cl2 gas is simultaneously supplied when supplying the WCl6 gas.
Inventors:
Yasushi Akasaka
Hayato Hayashi
Yasu Yasuba
Hayato Hayashi
Yasu Yasuba
Application Number:
JP2014163501A
Publication Date:
September 19, 2018
Filing Date:
August 11, 2014
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/14; C23C16/455; H01L21/28; H01L21/285
Domestic Patent References:
| JP3285076A | ||||
| JP2008311457A | ||||
| JP2001172049A |
Attorney, Agent or Firm:
Hiroshi Takayama