Title:
任意のイットリア被覆層を有するＡｌＯＮコーティングされた基体
Document Type and Number:
Japanese Patent JP6404381
Kind Code:
B2
Abstract:
A fluorine plasma resistant coating on a substrate being a component in a semiconductor manufacturing system is disclosed. In one embodiment the composition includes an AlON coating that overlies a substrate, and an optional yttria coating layer that overlies the AlON coating, with a total coating thickness of about 5-6 microns.
Inventors:
Niresh Gunda
Application Number:
JP2017033144A
Publication Date:
October 10, 2018
Filing Date:
February 24, 2017
Export Citation:
Assignee:
Entegris Incorporated
International Classes:
C23C14/06; C04B41/89
Domestic Patent References:
| JP7153370A | ||||
| JP2006157043A | ||||
| JP2008080712A | ||||
| JP2009287058A | ||||
| JP2010280941A | ||||
| JP2000164572A | ||||
| JP11214194A | ||||
| JP2007290933A | ||||
| JP2011139047A | ||||
| JP3281779A | ||||
| JP1108187A | ||||
| JP2006179860A |
Foreign References:
| WO2011066314A1 | ||||
| WO2008041402A1 | ||||
| WO2012018970A1 |
Other References:
M. Wolborski et al.,Improved Properties of AlON/4H-SiC Interface for Passivation Studies,MATERIALS SCIENCE FORUM,2009年 1月,Vol. 600-603,pp. 763-766
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation