Title:
蒸着装置、蒸着方法及び有機ＥＬ表示装置の製造方法
Document Type and Number:
Japanese Patent JP6407479
Kind Code:
B2
Abstract:
A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.
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Inventors:
Mitsushi Nishida
Kozo Yano
Katsuhiko Kishimoto
Susumu Sakio
Kozo Yano
Katsuhiko Kishimoto
Susumu Sakio
Application Number:
JP2018506748A
Publication Date:
October 17, 2018
Filing Date:
July 22, 2016
Export Citation:
Assignee:
HON HAI PRECISION INDUSTRY CO.,LTD.
International Classes:
C23C14/50; C23C14/04; C23C14/12; G09F9/00; G09F9/30; H01L27/32; H01L51/50; H05B33/10
Domestic Patent References:
| JP2010180438A | ||||
| JP2010031345A | ||||
| JP2005256101A | ||||
| JP2012052155A | ||||
| JP2005281746A | ||||
| JP2008059757A | ||||
| JP2005206939A | ||||
| JP2008108596A | ||||
| JP2007207632A |
Attorney, Agent or Firm:
Asahina Patent Office