Title:
添加剤を含むケイ素含有ＥＵＶレジスト下層膜形成組成物
Document Type and Number:
Japanese Patent JP6418412
Kind Code:
B2
Abstract:
There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.
Inventors:
Shuhei Shigaki
Hiroaki Taniguchi
Wataru Shibayama
Rikimaru Sakamoto
What Kunikei
Hiroaki Taniguchi
Wataru Shibayama
Rikimaru Sakamoto
What Kunikei
Application Number:
JP2016225412A
Publication Date:
November 07, 2018
Filing Date:
November 18, 2016
Export Citation:
Assignee:
Nissan Chemical Co., Ltd.
International Classes:
G03F7/26; G03F7/11; H01L21/027
Domestic Patent References:
| JP2007226170A |
Foreign References:
| WO2011033965A1 | ||||
| WO2013012068A1 | ||||
| WO2013022099A1 |
Other References:
R. Sakamoto, et al.,The Novel Spin-on Hard Mask and Ultra thin UL material for EUVL,2011 International Symposium on EUVL,米国,SEMATECH,2013年 3月 7日,第1-25頁,[URL http://www.sematech.org/meetings/archives/litho/euvl/10157EUVL/pres/Rikimaru%20Sakamoto.pdf]
Attorney, Agent or Firm:
Calyx
Miyazaki Yoshio
Tsutomu Kato
Companion wisdom
Miyazaki Yoshio
Tsutomu Kato
Companion wisdom