Title:
半導体装置
Document Type and Number:
Japanese Patent JP6433533
Kind Code:
B2
Abstract:
One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region.
Inventors:
Shunpei Yamazaki
Hiromitsu Goto
Hideomi Suzawa
Shinya Sasakawa
Kurata
Mayumi Mikami
Hiromitsu Goto
Hideomi Suzawa
Shinya Sasakawa
Kurata
Mayumi Mikami
Application Number:
JP2017086008A
Publication Date:
December 05, 2018
Filing Date:
April 25, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP2008135520A | ||||
| JP6013405A |
Foreign References:
| WO2008122575A1 | ||||
| WO2009081885A1 |