Title:
薄膜トランジスタの製造方法
Document Type and Number:
Japanese Patent JP6446521
Kind Code:
B2
Abstract:
A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.
Inventors:
Lee Dong
Wei Yo
Ginger
Han Moriyoshi
Wei Yo
Ginger
Han Moriyoshi
Application Number:
JP2017208972A
Publication Date:
December 26, 2018
Filing Date:
October 30, 2017
Export Citation:
Assignee:
Tsinghwa University
HON HAI PRECISION INDUSTRY CO.,LTD.
HON HAI PRECISION INDUSTRY CO.,LTD.
International Classes:
H01L29/786; C01B32/172; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2006278505A | ||||
| JP2008192795A | ||||
| JP2007031239A | ||||
| JP2010138064A | ||||
| JP2010020313A | ||||
| JP2015209373A | ||||
| JP2011166070A |
Attorney, Agent or Firm:
try international patent corporation