Title:
太陽電池の製造方法
Document Type and Number:
Japanese Patent JP6456279
Kind Code:
B2
Abstract:
An objective of this invention is to obtain a producing method for a solar cell, the method forms an electrode self-alignmently on a high-concentrated impurity diffusion layer and maximizes passivation effect of a passivation film, and exchange efficiency is high. The method of this invention contains: forming a backside dielectric layer 109 on a n-type monocrystalline silicon substrate 100 and a high-concentrated n-type impurity diffusion source 106, and then leaving out the high-concentrated n-type impurity diffusion source 106 and the backside dielectric layer 109 on the high-concentrated n-type impurity diffusion source 106 together, forming an opening h. And then, forming a negative electrode 113 contacted with a high-concentrated n-type impurity diffusion layer 107 in the opening h. Providing oxygen in or prior to the step of diffusing a n-type impurity from the n-type impurity diffusion source 106, forming the high-concentrated n-type impurity diffusion layer 107, and forming a hot-oxide film 108 in an area without the formation of n-type impurity diffusion source 106.
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Inventors:
Yumiko Kobayashi
Tatsuro Watabiki
Kunihiko Nishimura
Tatsuro Watabiki
Kunihiko Nishimura
Application Number:
JP2015250445A
Publication Date:
January 23, 2019
Filing Date:
December 22, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L31/18; H01L31/068
Domestic Patent References:
| JP2011512689A | ||||
| JP2010503190A | ||||
| JP2014197578A | ||||
| JP2009246214A | ||||
| JP2013236083A | ||||
| JP6169096A |
Foreign References:
| WO2014024297A1 | ||||
| WO2014118923A1 | ||||
| US20130199606 |
Attorney, Agent or Firm:
Jun Takamura