Title:
半導体装置
Document Type and Number:
Japanese Patent JP6522189
Kind Code:
B2
Abstract:
A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer is almost in a single-crystal state. Accordingly, a small thin display device with low power consumption can be manufactured. Further, a controller and a shift register which is included in a source driver are operated at the same power supply voltage. Thus, power consumption can be reduced.
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Inventors:
Hajime Kimura
Atsushi Umezaki
Atsushi Umezaki
Application Number:
JP2018052059A
Publication Date:
May 29, 2019
Filing Date:
March 20, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP2005234562A | ||||
| JP2004048029A | ||||
| JP2003281897A | ||||
| JP2007123861A | ||||
| JP8018009A | ||||
| JP2002134751A | ||||
| JP2002287653A |