Title:
半導体装置
Document Type and Number:
Japanese Patent JP6538577
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate and a control electrode provided on a first surface side of the semiconductor substrate. The semiconductor substrate includes a first area on the first surface side and two second areas on the first surface side of the first area. The two second areas are arranged along the first surface. The control electrode provided above a portion of the first area between the two second areas. The first area includes a main portion and a peripheral edge portion extending outward from the main portion along the first surface. A depth of the peripheral edge portion from the first surface is shallower than a depth of the main portion from the first surface; and the peripheral edge portion has a concentration of second conductivity type impurities lower than a concentration of the second conductivity type impurities at a surface of the main portion.
Inventors:
Hiroyuki Kutsukake
Application Number:
JP2016010565A
Publication Date:
July 03, 2019
Filing Date:
January 22, 2016
Export Citation:
Assignee:
Toshiba Memory Corporation
International Classes:
H01L21/336; H01L27/10; H01L27/11526; H01L29/78; H01L29/788; H01L29/792
Domestic Patent References:
| JP2005109233A | ||||
| JP2003152095A | ||||
| JP10256188A | ||||
| JP2002289696A |
Foreign References:
| WO2015001926A1 |
Attorney, Agent or Firm:
Masahiko Hinataji