Title:
酸化物半導体膜および半導体デバイス
Document Type and Number:
Japanese Patent JP6551414
Kind Code:
B2
Abstract:
There is provided an oxide semiconductor film (14) composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10 -1 ©cm. There is also provided a semiconductor device (10) including the oxide semiconductor film.
More Like This:
| JP6963463 | Semiconductor devices, electronic components, and electronic devices |
| JP2017112384 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| JP2015032655 | THIN FILM TRANSISTOR |
Inventors:
Miyanaga Miki
Kenichi Wataya
Hideaki Awata
Kenichi Wataya
Hideaki Awata
Application Number:
JP2016552545A
Publication Date:
July 31, 2019
Filing Date:
August 21, 2015
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP2011077511A | ||||
| JP2010251604A | ||||
| JP2012124446A | ||||
| JP2014205608A | ||||
| JP2014078645A | ||||
| JP2012067387A |
Foreign References:
| WO2009081885A1 |
Attorney, Agent or Firm:
Fukami patent office