Title:
接合構造部
Document Type and Number:
Japanese Patent JP6556198
Kind Code:
B2
Abstract:
To solve such a problem that recently an IoT progress and further energy saving are required; the importance of a power semiconductor bearing the core of technique thereof enhances all the more; the power semiconductor emits much heat to become high temperature because the semiconductor deals with a large power of high voltage and heavy current; accordingly, joint of a chip and a substrate needs a material sustaining high temperature, however a joint material responding such needs does not exist hitherto.SOLUTION: Such a problem that a joint material sustaining high temperature does not exist is solved by use of a metallic particle having a crystal structure in which the crystal of an intermetallic compound joins endotaxially to the host phase of Sn alloy.SELECTED DRAWING: Figure 2A
Inventors:
Shigenobu Sekine
Application Number:
JP2017153952A
Publication Date:
August 07, 2019
Filing Date:
August 09, 2017
Export Citation:
Assignee:
Napura Co., Ltd.
International Classes:
B23K35/26; B22F1/00; B22F9/10; C22C13/00
Domestic Patent References:
| JP2009141197A | ||||
| JP2001342549A | ||||
| JP2013143243A |
Attorney, Agent or Firm:
Shigeru Noda