Title:
半導体装置
Document Type and Number:
Japanese Patent JP6560508
Kind Code:
B2
Abstract:
To provide a semiconductor device which includes a novel refresh circuit in a memory including an oxide semiconductor film. As circuits which operate in a refresh operation of the memory including the oxide semiconductor film, a sense amplifier circuit, a latch circuit, a first switch, and a second switch are provided. In the refresh operation, a potential which reflects a potential stored in the memory is input to the sense amplifier circuit, an output of the sense amplifier circuit is input to the latch circuit, and an output of the latch circuit is written to the memory again through the first switch and a first transistor including an oxide semiconductor in a channel.
Inventors:
Jun Koyama
Application Number:
JP2015047224A
Publication Date:
August 14, 2019
Filing Date:
March 10, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C11/405; G11C7/06; G11C11/4091; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP2011258303A | ||||
| JP2004335883A | ||||
| JP2002216482A |
Foreign References:
| US20100020586 |