Title:
半導体装置
Document Type and Number:
Japanese Patent JP6562066
Kind Code:
B2
Abstract:
A semiconductor layer of a first conductivity type has a plurality of impurity concentration peaks that are differently positioned in a first direction extending from a first surface to a second surface, and an integrated concentration obtained by integrating an impurity concentration value in the first direction from (i) the first surface that is a junction interface between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type to (ii) a boundary between a first impurity concentration peak of the plurality of impurity concentration peaks that is the closest to the first surface and a second impurity concentration peak of the plurality of impurity concentration peaks that is the second closest to the first surface is equal to or lower than a critical integrated concentration.
Inventors:
Imagawa Tetsutaro
Application Number:
JP2017242421A
Publication Date:
August 21, 2019
Filing Date:
December 19, 2017
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/739; H01L21/265; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2009176892A | ||||
| JP2004193212A |
Foreign References:
| US20060081923 | ||||
| US20080001257 | ||||
| WO2011052787A1 | ||||
| WO2013080417A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation