Title:
同一面電極のフォトダイオードアレイ及びその製造方法
Document Type and Number:
Japanese Patent JP6577601
Kind Code:
B2
Abstract:
A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.
Inventors:
Zhang Arashi
Lee Yuan Jing
Liu Yi
Hu Hai sail
LI,Jun
Lee Yuan Jing
Liu Yi
Hu Hai sail
LI,Jun
Application Number:
JP2017562301A
Publication Date:
September 18, 2019
Filing Date:
August 31, 2016
Export Citation:
Assignee:
Isotropic Technology Technology Co., Ltd.
International Classes:
H01L31/10
Domestic Patent References:
| JP2008066446A | ||||
| JP2012033928A | ||||
| JP61084061A | ||||
| JP53010987A | ||||
| JP2005045125A | ||||
| JP2000312021A | ||||
| JP8250761A |
Foreign References:
| US20050184353 | ||||
| CN105185796A | ||||
| WO2005001939A1 | ||||
| US20140291481 |
Attorney, Agent or Firm:
Fukami patent office