Title:
発光装置
Document Type and Number:
Japanese Patent JP6580660
Kind Code:
B2
Abstract:
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
More Like This:
| JP2000243966 | MANUFACTURE OF THIN FILM TRANSISTOR |
| WO/2023/068170 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
| JP6212583 | Semiconductor device |
Inventors:
Shunpei Yamazaki
Takabe Abe
Hideshi Shishido
Takabe Abe
Hideshi Shishido
Application Number:
JP2017224253A
Publication Date:
September 25, 2019
Filing Date:
November 22, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/336
Domestic Patent References:
| JP2008089915A | ||||
| JP2001144301A | ||||
| JP2005045017A | ||||
| JP2003069022A | ||||
| JP2008135731A |