Title:
絶縁膜及び記憶装置
Document Type and Number:
Japanese Patent JP6581446
Kind Code:
B2
Abstract:
According to one embodiment, an insulator includes a material including barium and hafnium oxide. The material has a crystal structure of a space group Pbc21.
Inventors:
Tsunehiro Ino
Yasushi Nakazaki
Shosuke Fujii
Daisuke Matsushita
Yasushi Nakazaki
Shosuke Fujii
Daisuke Matsushita
Application Number:
JP2015177264A
Publication Date:
September 25, 2019
Filing Date:
September 09, 2015
Export Citation:
Assignee:
Toshiba Memory Corporation
International Classes:
H01L21/316; H01L27/1159; H01L27/11597
Domestic Patent References:
| JP2015065251A | ||||
| JP2007273548A | ||||
| JP11087634A | ||||
| JP2005216951A | ||||
| JP2015015334A | ||||
| JP2003502837A | ||||
| JP2001210794A |
Attorney, Agent or Firm:
Masahiko Hinataji