Title:
ＣＩＧＳ光吸収層を含む太陽電池及びその製造方法
Document Type and Number:
Japanese Patent JP6586238
Kind Code:
B2
Abstract:
The resent invention relates to a method for manufacturing a solar cell, the method comprising the steps of: (a) forming a lower electrode layer on a substrate; (b) forming a CIGS light absorbing layer on the lower electrode layer by supplying a copper precursor to deposit a copper thin film using chemical vapor deposition and then supplying a gallium precursor, an indium precursor, and a first selenium precursor to deposit a gallium thin film and an indium-selenium thin film using chemical vapor deposition; and (c) sequentially forming a buffer layer and a front electrode layer on the CIGS light absorbing layer.
Inventors:
Jean Hyukkyu
Sodons
Lee Kyu Hyun
Lee Ho-gun
Sodons
Lee Kyu Hyun
Lee Ho-gun
Application Number:
JP2018533788A
Publication Date:
October 02, 2019
Filing Date:
January 13, 2016
Export Citation:
Assignee:
MECARO CO.,LTD.
International Classes:
H01L31/18; H01L31/0749
Domestic Patent References:
| JP2012182177A | ||||
| JP2015515743A | ||||
| JP2015179863A |
Foreign References:
| KR101472409B1 |
Attorney, Agent or Firm:
Hiroaki Kono