Title:
パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、上層膜形成用組成物
Document Type and Number:
Japanese Patent JP6594409
Kind Code:
B2
Abstract:
A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.
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Inventors:
Naoya Hatakeyama
Naoki Inoue
Dan Gou
Shirakawa Mitsuhiro
Kenyo Goto
Naoki Inoue
Dan Gou
Shirakawa Mitsuhiro
Kenyo Goto
Application Number:
JP2017509444A
Publication Date:
October 23, 2019
Filing Date:
March 04, 2016
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
G03F7/11; C08F220/10; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| JP2013061648A | ||||
| JP2006276443A | ||||
| JP2014056194A | ||||
| JP2008309878A | ||||
| JP2013064971A | ||||
| JP2013061647A | ||||
| JP2013033227A |
Attorney, Agent or Firm:
Patent Business Corporation Koei Patent Office