Title:
半導体装置
Document Type and Number:
Japanese Patent JP6624300
Kind Code:
B2
Abstract:
A semiconductor device is provided that includes: an edge termination portion provided in the peripheral portion of a semiconductor substrate; and an active portion surrounded by the edge termination portion, wherein the active portion includes: a plurality of gate trench portions arrayed along a predetermined array direction; a plurality of dummy trench portions provided between a gate trench portion closest to the edge termination portion among the plurality of gate trench portions and the edge termination portion; mesa regions located between each of the plurality of dummy trench portions; and accumulation regions with a first conductivity-type provided in at least a part of the mesa regions.
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Inventors:
Tatsuya Naito
Application Number:
JP2018546329A
Publication Date:
December 25, 2019
Filing Date:
October 16, 2017
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/739; H01L21/822; H01L21/8234; H01L21/8249; H01L27/04; H01L27/06; H01L27/088; H01L29/06; H01L29/12; H01L29/41; H01L29/417; H01L29/423; H01L29/49; H01L29/78
Domestic Patent References:
| JP9270512A | ||||
| JP2005294649A | ||||
| JP2007134625A | ||||
| JP2010118642A | ||||
| JP2013021104A | ||||
| JP2013026534A | ||||
| JP2014132625A | ||||
| JP2015135954A | ||||
| JP2016029710A | ||||
| JP2016082097A | ||||
| JP2016082167A |
Foreign References:
| WO2006082618A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation