Title:
フォトレジストおよびその使用方法
Document Type and Number:
Japanese Patent JP6641092
Kind Code:
B2
Abstract:
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Inventors:
Gerhard Pollers
Application Number:
JP2015046268A
Publication Date:
February 05, 2020
Filing Date:
March 09, 2015
Export Citation:
Assignee:
Rohm and Haas Electronic Materials LLC
International Classes:
G03F7/075; G03F7/09; H01L21/027
Domestic Patent References:
| JP2004277493A | ||||
| JP200998616A | ||||
| JP2002296780A | ||||
| JP2008304902A | ||||
| JP2008532074A | ||||
| JP200852102A | ||||
| JP2008197606A | ||||
| JP2003288813A |
Foreign References:
| US20030138731 | ||||
| WO2009136647A1 | ||||
| WO2009104748A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sender International Patent Office