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Patent Searching and Data


Title:
フォトリソグラフィマスクまたはウェハの欠陥を分析するためのデバイスおよび方法
Document Type and Number:
Japanese Patent JP6643273
Kind Code:
B2
Abstract:
The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Inventors:
Gabriel Bararia
Christoph Bauer
Claus Edinger
Torsten Hoffmann
Michael Budach
Application Number:
JP2017077274A
Publication Date:
February 12, 2020
Filing Date:
April 10, 2017
Export Citation:
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Assignee:
Carl Zeiss SGM Gaehha
International Classes:
G01Q30/02; G01N1/28; G01Q30/04; G01Q30/20; H01J37/28; H01J37/305
Domestic Patent References:
JP10260138A
JP2014521230A
JP2011249512A
JP5142121A
JP11074163A
JP2009003321A
JP2014517299A
Foreign References:
US7281419
US20140007306
US5043578
US9164371
US6683316
US20130101188
WO2012110602A1
Attorney, Agent or Firm:
Shinichiro Tanaka
Disciple Maru Ken
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Naoki Kondo