Title:
ＩＩＩ−Ｎデバイスの凹部に形成されるオーミックコンタクト
Document Type and Number:
Japanese Patent JP6661637
Kind Code:
B2
Abstract:
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.
Inventors:
Toshihide Yoshikawa
Kenji Kiuchi
Tsutomu Hosoda
Masahito Kanamura
Mochizuki Akiju
Kenji Kiuchi
Tsutomu Hosoda
Masahito Kanamura
Mochizuki Akiju
Application Number:
JP2017531822A
Publication Date:
March 11, 2020
Filing Date:
December 14, 2015
Export Citation:
Assignee:
Transform Incorporated
International Classes:
H01L21/338; H01L21/28; H01L29/41; H01L29/417; H01L29/778; H01L29/812
Domestic Patent References:
| JP2012023211A | ||||
| JP2007227409A | ||||
| JP2013118360A | ||||
| JP2011082216A | ||||
| JP2009246307A |
Foreign References:
| US20120223317 |
Attorney, Agent or Firm:
Hiraki International Patent Office