Title:
半導体集積回路とその制御方法及び多層回路基板
Document Type and Number:
Japanese Patent JP6672988
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of changing the capacity of a bypass capacitor without increasing a leakage current of the semiconductor integrated circuit.SOLUTION: Disclosed is a semiconductor integrated circuit having a by-pass capacitor between a power source voltage inside the semiconductor integrated circuit and the ground. A circuit of the semiconductor integrated circuit is divided into a plurality of power source cut-off regions. Each power source cut-off region includes a switch and the by-pass capacitor which are inserted between the power source voltage and the circuit inside each power source cut-off region, respectively. By performing on/off control of the switch in each power source cut-off region, the semiconductor integrated circuit includes a control circuit for changing the capacity of the by-pass capacitor.SELECTED DRAWING: Figure 1
Inventors:
Yoshinori Shimosakoda
Application Number:
JP2016085414A
Publication Date:
March 25, 2020
Filing Date:
April 21, 2016
Export Citation:
Assignee:
株式会社リコー
International Classes:
H01L21/822; H01L27/04
Domestic Patent References:
| JP2009099718A | ||||
| JP2006173369A | ||||
| JP2011155144A | ||||
| JP2013118451A | ||||
| JP2007221046A | ||||
| JP2007250604A | ||||
| JP10135336A |
Attorney, Agent or Firm:
Mitsuo Tanaka
Samejima Mutsumi
Samejima Mutsumi