Title:
反射型マスクブランク及び反射型マスク
Document Type and Number:
Japanese Patent JP6678269
Kind Code:
B2
Abstract:
To obtain a reflective mask blank which can obtain high contrast in an edge portion of a phase shift film pattern.SOLUTION: In a reflective mask blank, a multilayer reflection film and a phase shift film for shifting the phase of EUV light are formed, in the order, on a substrate. The reflective mask blank is characterized in that, in a 1×1 μm region of the surface of the phase shift film, the root-mean-square roughness (Rms) obtained by measurement with an atomic force microscope is 0.50 nm or less, and the power spectral density at a spatial frequency of 10-100 μmis 17 nmor less.SELECTED DRAWING: Figure 5
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Inventors:
Kazuhiro Hamamoto
Youhei Ikebe
Youhei Ikebe
Application Number:
JP2019048469A
Publication Date:
April 08, 2020
Filing Date:
March 15, 2019
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/24; G03F1/32; G03F1/48; G03F1/54; G03F1/60
Domestic Patent References:
| JP2014186333A |
Foreign References:
| WO2011004850A1 | ||||
| WO2014129527A1 |
Attorney, Agent or Firm:
Patent business corporation Tsukuni