Title:
表示装置
Document Type and Number:
Japanese Patent JP6685369
Kind Code:
B2
Abstract:
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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Inventors:
Kato Mizuki
Application Number:
JP2018213515A
Publication Date:
April 22, 2020
Filing Date:
November 14, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; H01L21/336; H01L27/32; H01L29/786; H01L51/50; H05B44/00
Domestic Patent References:
| JP2003295793A | ||||
| JP2001051622A | ||||
| JP2003174170A | ||||
| JP2006189852A |