Title:
半導体構造体および半導体素子
Document Type and Number:
Japanese Patent JP6686876
Kind Code:
B2
Abstract:
There are provided a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a semiconductor device. The semiconductor structure comprises a substrate, a bridging portion bridged to the substrate, a semiconductor layer formed on the bridging portion, a void defined by the substrate and the bridging portion. The bridging portion has a plurality of through holes. The through holes are blocked with the semiconductor layer. Therefore, the semiconductor layer does not have a through hole.
Inventors:
Koji Okuno
Application Number:
JP2016257145A
Publication Date:
April 22, 2020
Filing Date:
December 28, 2016
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L33/22; H01L21/205; H01L33/32
Domestic Patent References:
| JP2011040760A | ||||
| JP2001267242A | ||||
| JP2007036174A | ||||
| JP2014118346A | ||||
| JP2015088701A | ||||
| JP2010153450A | ||||
| JP2002200599A |
Foreign References:
| WO2015128319A1 | ||||
| WO2016010323A1 |
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Tomohiro Sumiya
Akinori Isshiki
Tomohiro Sumiya