Title:
半導体装置
Document Type and Number:
Japanese Patent JP6691173
Kind Code:
B2
Abstract:
A semiconductor device in which charge capacity of a capacitor is increased without a reduction in aperture ratio is provided. In a transistor including a light-transmitting semiconductor film and a capacitor in which a dielectric film is provided between a pair of electrodes, the pair of electrodes and the dielectric film are formed using a light-transmitting material. A semiconductor film which is formed on the same surface as the semiconductor film of the transistor is used as one of the pair of electrodes. The dielectric film included in the capacitor is formed using a gate insulating film. The other of the pair of electrodes is formed using a light-transmitting semiconductor film or a light-transmitting conductive film.
Inventors:
Shunpei Yamazaki
Application Number:
JP2018125831A
Publication Date:
April 28, 2020
Filing Date:
July 02, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/06; H01L27/088
Domestic Patent References:
| JP2010232652A | ||||
| JP2012093707A | ||||
| JP2009302520A | ||||
| JP2011054946A | ||||
| JP2012083391A | ||||
| JP10082996A | ||||
| JP2079026A | ||||
| JP4067020A | ||||
| JP2014199899A |
Foreign References:
| US20100224880 | ||||
| CN101826520A | ||||
| US20120097940 | ||||
| US20110031497 | ||||
| KR1020110015374A |