Title:
発光装置
Document Type and Number:
Japanese Patent JP6691587
Kind Code:
B2
Abstract:
A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including the p-type host, and where the n-type host and the p-type host are able to form an exciplex in the light-emitting layer. The light-emitting element exhibits an extremely high emission efficiency (power efficiency of 74.3 lm/W, external quantum efficiency of 24.5%, energy efficiency of 19.3%) at a low driving voltage (2.6 V) at which luminance of 1200 cd/m2 is attainable.
Inventors:
Shunpei Yamazaki
Tetsushi Seo
Tomoko Shimogaki
Nobuharu Osawa
Yoshizumi Eiko
Hiroshi Monma
Harue Osaka
Tetsushi Seo
Tomoko Shimogaki
Nobuharu Osawa
Yoshizumi Eiko
Hiroshi Monma
Harue Osaka
Application Number:
JP2018187384A
Publication Date:
April 28, 2020
Filing Date:
October 02, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L51/50; C09K11/06
Domestic Patent References:
| JP2009003435A | ||||
| JP2002313583A | ||||
| JP2006203172A | ||||
| JP2009117356A |
Foreign References:
| WO2010134352A1 |
Other References:
Phosphorescence from iridium complexes doped into polymer blends,JOURNAL OF APPLIED PHYSICS,米国,2004年 2月,Vol.95,No.3,948-953