Title:
炭化珪素単結晶成長用種結晶の製造方法及び炭化珪素単結晶インゴットの製造方法
Document Type and Number:
Japanese Patent JP6695182
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a seed crystal for growing a SiC single crystal for suppressing a through screw dislocation to occur in the vicinity of the interface between the seed crystal and the growth SiC single crystal thereby to reduce a dislocation density thereby to reduce the dislocation density so that a SiC single crystal ingot having the through screw growth can be obtained from a growth initial stage.SOLUTION: In a seed crystal manufacturing method to be used for growing a SiC single crystal on the seed crystal by a sublimation recrystallization method, a silicon carbide single crystal ingot is cut, and the cut face is mechanically polished toat least 2 μm, and the surface of said mechanically polished face. The SiC single crystal ingot is manufactured by using said seed crystal.SELECTED DRAWING: Figure 3
Inventors:
Kodani Tani
Tatsuo Fujimoto
Hiroshi Tsuge
Tatsuo Fujimoto
Hiroshi Tsuge
Application Number:
JP2016058793A
Publication Date:
May 20, 2020
Filing Date:
March 23, 2016
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B29/36
Domestic Patent References:
| JP2014034485A | ||||
| JP2015189633A |
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mitsuhashi
Masatoshi Takahashi
Naori Kota
Hajime Kawahara
Yasuo Dogaki
Shinji Mitsuhashi
Masatoshi Takahashi
Naori Kota
Hajime Kawahara
Yasuo Dogaki