Title:
半導体装置
Document Type and Number:
Japanese Patent JP6715364
Kind Code:
B2
Abstract:
Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.
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Inventors:
Shunpei Yamazaki
Hideomi Suzawa
Hideomi Suzawa
Application Number:
JP2019071160A
Publication Date:
July 01, 2020
Filing Date:
April 03, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8234; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L21/8238; H01L21/8242; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L27/092; H01L27/108; H01L27/1156; H01L27/32; H01L29/417; H01L29/786; H01L29/788; H01L29/792; H01L51/50; H05B33/14
Domestic Patent References:
| JP2013168644A | ||||
| JP2013179295A | ||||
| JP2013102134A |