Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6729003
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method which achieve high reliability even under hot conditions.SOLUTION: A semiconductor device comprises a protection/control circuits such as an overvoltage protection part, a current sense part and a temperature sense part, which are arranged on a silicon carbide substrate 100 the same with a main semiconductor element 10. A gate pad 19 of the main semiconductor element 10 and respective electrode pads 32, 48, 54, 55 of a plurality of semiconductor elements composing the protection/control circuits are arranged at the central part of an active region 101 linearly in one row. A plurality of source pads 12 of the main semiconductor element 10 are arranged so as to sandwich electrode pads 19, 32, 48, 54, 55 other than the source pads 12. On all of the source pads 12 and the pad 19 of the main semiconductor element 10 and respective electrode pads 32, 48, 54, 55 of the plurality of semiconductor elements composing the protection/control circuit, terminal pins are arranged via plating films and solder films, respectively.SELECTED DRAWING: Figure 4
Inventors:
Takashi Shiiki
Shoji Yamada
Yuichi Harada
Yasuyuki Hoshi
Shoji Yamada
Yuichi Harada
Yasuyuki Hoshi
Application Number:
JP2016111758A
Publication Date:
July 22, 2020
Filing Date:
June 03, 2016
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L21/76; H01L29/12; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
| JP2014120638A | ||||
| JP2014099444A | ||||
| JP2012199385A |
Attorney, Agent or Firm:
Akinori Sakai