Title:
半導体基体及び半導体装置
Document Type and Number:
Japanese Patent JP6735078
Kind Code:
B2
Abstract:
A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.
Inventors:
Hiroshi Shikauchi
Ken Sato
Masaru Shinomiya
Keitaro Tsuchiya
Kazunori Hagimoto
Ken Sato
Masaru Shinomiya
Keitaro Tsuchiya
Kazunori Hagimoto
Application Number:
JP2015194840A
Publication Date:
August 05, 2020
Filing Date:
September 30, 2015
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
Shin-Etsu Semiconductor Co., Ltd.
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/338; H01L21/205; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2014072430A | ||||
| JP2014236050A | ||||
| JP2010123725A | ||||
| JP2013074211A |
Attorney, Agent or Firm:
Mikio Yoshimiya