Title:
双方向ツェナーダイオード
Document Type and Number:
Japanese Patent JP6738229
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a bidirectional zener diode capable of suppressing a cost increase and achieving excellent electric characteristics, and a method for manufacturing the same.SOLUTION: A bidirectional zener diode 1 includes a substrate 2. A p-type base region 3 is formed on the substrate 2. An n-type first impurity region 8 and an n-type second impurity region 9 are formed at intervals in a surface layer part of the base region 3. A first external electrode electrically connected to the n-type first impurity region 8 and the second external electrode electrically connected to the second impurity region 9 are arranged on a surface of the substrate 2. In this configuration, a dimension S along a surface of the substrate 2 in the base region 3 existing between the first impurity region 8 and the second impurity region 9 is not less than 4.0 μm and not more than 12.5 μm.SELECTED DRAWING: Figure 4
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Inventors:
Hiroki Yamamoto
Application Number:
JP2016147655A
Publication Date:
August 12, 2020
Filing Date:
July 27, 2016
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L21/329; H01L21/265; H01L29/06; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
| JP2015164170A |
Foreign References:
| US20150255628 |
Attorney, Agent or Firm:
Patent Business Corporation Ai Patent Office